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| inchange semiconductor product specification silicon npn power transistors 2SD2222 description ? with to-3pl package ? complement to type 2sb1470 ?high dc current gain ? low saturation voltage v ce(sat) ? darlington applications ? for power amplification pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a t c =25 ?? 120 p c collector power dissipation t a =25 ?? 3.5 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pl) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2222 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ;i b =0 160 v v cesat collector-emitter saturation voltage i c =7a ;i b =7ma 3.0 v v besat base-emitter saturation voltage i c =7a ;i b =7ma 3.0 v i cbo collector cut-off current v cb =160v; i e =0 100 | a i ceo collector cut-off current v ce =160v; i b =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =1a ; v ce =5v 1000 h fe-2 dc current gain i c =7a ; v ce =5v 3500 20000 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 2.0 | s t s storage time 6.0 | s t f fall time i c =7a ;i b1 =-i b2 =7ma v cc =50v 1.2 | s ? h fe-2 classifications q p 3500-10000 7000-20000 inchange semiconductor product specification 3 silicon npn power transistors 2SD2222 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.50 mm) |
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